NJU26100 Series Hardware Specification

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NJRC

日本无线

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 7.6A, RDS(ON) = 22mW @VGS = 10V. RDS(ON) = 33mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. 20V, 6A, RDS(ON) = 27mW @VGS = 4.5V. RDS(ON) = 40mW @VGS = 2.5V.

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CET-MOS

华瑞

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 33mΩ @VGS = 4.5V. ■ 20V, 6A, RDS(ON) = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lea

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CET

华瑞

DMP16

JRC/新日本无线

上传：深圳市恒佳微电子有限公司

QFP

JRC/新日本无线

上传：深圳市昂芯微科技有限公司