Precision Operational Amplifier

■ FEATURES ●Precision VIO=60μV max. VIO=100μV max. (Ta= -40℃ to +85℃) ●Low Offset Drift ⊿VIO/⊿T=1.2μV/℃ max. (Ta= -40℃ to +85℃) ●CMR 115dB min. ●Low Noise VNI=80nVrms typ. at f=1 to 100Hz en=8nV/√Hz typ. at f=100Hz ●Open Loop Gain Av=126dB min. ●Operating Temperature Topr=-40℃ to +105℃ ●G

文件：1.57493 Mbytes 页数：19 Pages

NISSHINBO

日清纺微电子

General Purpose Silicon Rectifier

Description: The NTE177 is a general purpose silicon rectifier in a DO35 case designed for switching applications.

文件：18.74 Kbytes 页数：2 Pages

NTE

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

文件：34.27 Kbytes 页数：6 Pages

PHI

PHI

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体