2.0A 600V N-CHANNEL POWER MOSFET

FEATURES RDS(ON) @VGS = 10V Ultra Low gate charge (typical 9.0nC) Low reverse transfer capacitance (CRSS = typical 5.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness

文件：833.61 Kbytes 页数：6 Pages

DGNJDZ

南晶电子

2.0A 600V N-CHANNEL POWER MOSFET

文件：908.3 Kbytes 页数：6 Pages

DGNJDZ

南晶电子

2.0A 600V N-CHANNEL POWER MOSFET

文件：908.3 Kbytes 页数：6 Pages

DGNJDZ

南晶电子

2.0A 600V N-CHANNEL POWER MOSFET

FEATURES RDS(ON) @VGS = 10V Ultra Low gate charge (typical 9.0nC) Low reverse transfer capacitance (CRSS = typical 5.0 pF) Fast switching capability Avalanche energy specified Improved dv/dt capability, high ruggedness

文件：833.61 Kbytes 页数：6 Pages

DGNJDZ

南晶电子

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N60E is supplied

文件：94.74 Kbytes 页数：10 Pages

PHI

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