Low Capacitance ESD Protection w/ short−

to−battery and short−to−ground

Protection for Automotive High Speed

Data Lines

The NIS/NIV2161 is designed to protect high speed data lines

from ESD as well as short to vehicle battery situations. The ultra−low

capacitance and low ESD clamping voltage make this device an ideal

solution for protecting voltage sensitive high speed data lines while

the low RDS(on) FET limits distortion on the signal lines. The

flow−through style package allows for easy PCB layout and matched

trace lengths necessary to maintain consistent impedance between

high speed differential lines such as USB and LVDS protocols.

Features

• Low Capacitance (0.40 pF Typical, I/O to GND)

• Protection for the Following Standards:

IEC 61000−4−2 (Level 4) & ISO 10605

• Integrated MOSFETs for Short−to−Battery and Short−to−Ground

Protection

• NIV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Automotive High Speed Signal Pairs

• USB 2.0/3.0

• LVDS

• APIX 2/3

NIV2161MTTAG属于电路保护 > TVS - 二极管。安森美半导体公司制造生产的NIV2161MTTAGTVS - 二极管TVS 二极管是一种半导体器件，可用于限制或阻止特定电压电平的浪涌。该系列产品使用二极管（只能单向导电的元器件）进行设计。TVS 是 Transient Voltage Suppression/Suppressor（瞬态电压抑制/抑制器）的首字母缩写。类型包括转向（轨至轨）或齐纳，具有单向通道、双向通道、电压 – 反关态、电压 – 击穿、电压 – 箝位、电流 – 峰值脉冲、功率 – 峰值脉冲和电源线路保护等特征。