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NIMD6302R2中文资料安森美半导体数据手册PDF规格书
NIMD6302R2规格书详情
HDPlus devices are an advanced HDTMOS™ series of power MOSFET which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while incorporating smart features. They are capable of withstanding high energy in the avalanche and commutation modes. The avalanche energy is specified to eliminate guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
This HDPlus device features an integrated Gate–to–Source clamp for ESD protection. Also, this device features a mirror FET for current monitoring.
• ±3.5 Current Mirror Accuracy in Linear Region
• ±15 Current Mirror Accuracy in Low Current Saturation Region
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Current Sense FET
• ESD Protected on the Main and the Mirror FET
产品属性
- 型号：
NIMD6302R2
- 功能描述：
MOSFET NFET S08D 30V .050R
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VARTA |
19+ |
DIP2 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
WINGSHING |
2450+ |
DIP2 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
询价 | ||
ON |
04+ |
SOP8 |
1500 |
全新原装绝对自己公司现货 |
询价 | ||
ON |
6000 |
面议 |
19 |
SMD |
询价 | ||
FC |
20+ |
电感器 |
682000 |
电感原装优势主营型号-可开原型号增税票 |
询价 | ||
NETSWAP |
2402+ |
SMD |
8324 |
原装正品!实单价优! |
询价 | ||
TE/泰科 |
24+ |
SMD1812 |
27950 |
郑重承诺只做原装进口现货 |
询价 | ||
NETSWAP |
23+ |
SMD |
28611 |
只做原装,专为终端工厂服务,BOM全配。 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOP8 |
2028 |
全新原装正品支持含税 |
询价 | ||
ON |
SOP8 |
10800 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 |
