Self-Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating

文件：58.08 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Self−Protected FET with Temperature and Current Limit

Self−Protected FET with Temperature and Current Limit\n42 V, 2.0 A, Single N−Channel, SOT−223HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smar • Current Limitation\n• Thermal Shutdown with Automatic Restart\n• Short Circuit Protection\n• IDSS Specified at Elevated Temperature\n• Avalanche Energy Specified\n• Slew Rate Control for Low Noise Switching\n• Overvoltage Clamped Protection\n• Pb−Free Packages are AvailableApplications\n• Lighting;

ONSEMI

安森美半导体

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

文件：1.01038 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Self?뭁rotected FET with Temperature and Current Limit

文件：74.42 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Package：TO-261-4，TO-261AA；包装：管件 类别：集成电路（IC） 配电开关，负载驱动器 描述：IC PWR DRIVER N-CHAN 1:1 SOT223

ONSEMI

安森美半导体