NGW40T65M3DFP中文资料安世数据手册PDF规格书

General Description

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring

third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures.

The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs. This hard-switching 650 V, 40 A IGBT is optimized for high-voltage,

high-frequency industrial power inverter applications and servo motor drive applications

Features and benefits

• Collector current (IC) rated at 40 A

• Low conduction and switching losses

• Stable and tight parameters for easy parallel operation

• Maximum junction temperature of 175 °C

• Fully rated as a soft fast reverse recovery diode

• 5 μs short circuit withstand time

• RoHS compliant, lead-free plating

Applications

• Motor drives for industrail and consumer appliances

• Serve motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating

grippers, in-line manufactuing, etc.

• Power inverters

• Uninterruptible Power Supply (UPS) inverter

• Photovoltaic (PV) strings

• EV charging

• Induction heating

• Welding