| 订购数量 | 价格 |
|---|---|
| 1+ |
NGTB05N60R2DT4G_ONSEMI/安森美半导体_IGBT 600V, 8A, N-Channel正纳电子一部
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产品属性
- 类型
描述
- 制造商编号
:NGTB05N60R2DT4G
- 生产厂家
:安森美
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- V(BR)CES Typ (V)
:600
- IC Max (A)
:8
- VCE(sat) Typ (V)
:1.65
- VF Typ (V)
:1.5
- Eoff Typ (mJ)
:0.06
- Eon Typ (mJ)
:0.188
- Trr Typ (ns)
:70
- Irr Typ (A)
:-
- Gate Charge Typ (nC)
:30
- Short Circuit Withstand (µs)
:5
- EAS Typ (mJ)
:-
- PD Max (W)
:56
- Co-Packaged Diode
:Yes
- Package Type
:DPAK-3
供应商
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