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文件：283.09 Kbytes 页数：18 Pages

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80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：301.36 Kbytes 页数：16 Pages

NEXPERIA

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80 V, 100 mA NPN resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：303.9 Kbytes 页数：16 Pages

NEXPERIA

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80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEDEC NPN complement: NHDTA123JT 2.2 47 NHDTC123JT NHDTA143ZT 4.7 47 NHDTC143ZT

文件：301.39 Kbytes 页数：16 Pages

NEXPERIA

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