SURFACE MOUNT CASE SIZES (0603 ~ 1206)

文件：147.89 Kbytes 页数：5 Pages

NIC

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 67A, RDS(ON) = 7.8 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：949.16 Kbytes 页数：6 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 70A, RDS(ON) = 7.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：1.29875 Mbytes 页数：6 Pages

CET-MOS

华瑞

MURATA/村田
SMD

MURATA/村田

上传：深圳市恒佳微电子有限公司

村田
SMD

村田

上传：深圳市麒裕半导体科技有限公司