NESG2021M16-T3-A数据手册供应代理瑞萨NEC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NESG2021M16-T3-A	文件：120.23 Kbytes Page：12 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., 文件：120.23 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
NESG2021M16-T3-A	文件：337.32 Kbytes Page：14 Pages	NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga 文件：337.32 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NESG2021M16-T3-A	文件：224.18 Kbytes Page：3 Pages	NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：224.18 Kbytes 页数：3 Pages	CALMIRCO	CALMIRCO
NESG2021M16-T3-A	文件：861.91 Kbytes Page：11 Pages	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) 文件：861.91 Kbytes 页数：11 Pages	CEL	CEL

更多NESG2021M16-T3-A供应商更新时间2025-10-4 11:06:00