NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER

DESCRIPTION The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and Gain

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NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER

DESCRIPTION\nThe NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/PHS base station applications. It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability.FEATURES\nHigh Linear Power and Gain\nLow Internal High Linear Power and Gain\nLow Internal Modulation Distortion\nHigh Reliability Gold Metalization\nEmitter Ballasting\n24 V Operation\n\nAPPLICATION\nDigital Cellular : PCN/PCS etc.\nDigital Cordless: PHS etc. ;

Renesas

瑞萨

模块

UBLOX

上传：深圳市柯尔基电子有限公司

GPS

U-BLOX

上传：深圳市盛泰捷科电子有限公司

GPS

UBLOX

上传：深圳市宇创芯科技有限公司