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NEL200101-24中文资料NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier数据手册Renesas规格书
NEL200101-24规格书详情
描述 Description
DESCRIPTION AND APPLICATIONS
NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
特性 Features
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
应用 Application
NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.
It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.FEATURES
• High Linear Power and Gain
• Low Internal Modulation Distortion
• High Reliability Gold Metallization
• Emitter Ballasting
• 24 V Operation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
3294 |
原装现货,当天可交货,原型号开票 |
询价 | ||
NEC |
23+ |
NA |
12000 |
全新原装假一赔十 |
询价 | ||
NEC |
24+ |
NA |
3000 |
全新原装现货 优势库存 |
询价 | ||
TI |
三年内 |
1983 |
只做原装正品 |
询价 | |||
NEC |
05+ |
SMD |
44 |
询价 | |||
NEC |
6000 |
面议 |
19 |
DIP/SMD |
询价 | ||
NEC |
25+ |
LCD |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
NEC |
2450+ |
SMD |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
询价 | ||
NEL-D3-048(A) |
10 |
10 |
询价 | ||||
NEL |
新 |
40 |
全新原装 货期两周 |
询价 |
