NE32984D-T1A资料datasheet下载供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NE32984D-T1A	文件：207.1 Kbytes Page：14 Pages	丝印：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.40 文件：207.1 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NE32984D-T1	文件：207.1 Kbytes Page：14 Pages	HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.40 文件：207.1 Kbytes 页数：14 Pages	RENESAS 瑞萨	RENESAS
NE32984D-T1	文件：51.12 Kbytes Page：4 Pages	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET 文件：51.12 Kbytes 页数：4 Pages	NEC 瑞萨	NEC
NE3509M04-T2-A	文件：0 bytes Page：0 Pages	RENESAS SOT343	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
NE3509M04-T2-A	文件：0 bytes Page：0 Pages	RENSASA SOT-343	RENSASA 上传：深圳亿达电子经营部	RENSASA

更多NE32984D-T1A供应商更新时间2025-10-4 10:59:00