HIGH INSERTION GAIN: 18.5 dB at 500 MHz

DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The ser

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CEL

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

[CEL] DESCRIPTION NECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styl

文件：171.51 Kbytes 页数：12 Pages

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NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION\nNECs NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in several package styles. The series • HIGH INSERTION GAIN: 18.5 dB at 500 MHz\n• LOW NOISE FIGURE: 1.5 dB at 500 MHz\n• HIGH POWER GAIN: 12 dB at 2 GHz\n• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression;

CEL

LOW Vf SCHOTTKY BARRIER RECTIFIER

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RECTRON

丽正国际

LOW Vf SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 0.2 Ampere

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RECTRON

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Coarse Wavelength Division Multiplexer (CWDM) Add/Drop Filter

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JDSU

捷迪讯