N-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：226.5 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

80V, 50mA OPERATIONAL AMPLIFIERS

文件：335.84 Kbytes 页数：17 Pages

TI

德州仪器

80V, 50mA OPERATIONAL AMPLIFIERS

文件：924.25 Kbytes 页数：21 Pages

TI

德州仪器

80V, 50mA OPERATIONAL AMPLIFIERS

FEATURES WIDE POWER-SUPPLY RANGE: ±10V to ±40V HIGH OUTPUT LOAD DRIVE: 50mA Continuous WIDE OUTPUT VOLTAGE SWING: 1V to Rail FULLY PROTECTED: Thermal Shutdown Output Current-Limited WIDE OPERATING TEMPERATURE RANGE: –40°C TO +125°C PACKAGE OPTIONS: TO220-7 DDPACK-7 Surface-Mount AP

文件：450.16 Kbytes 页数：20 Pages

TI

德州仪器