N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching perf

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FAIRCHILD

仙童半导体

N-Channel 100-V (D-S) MOSFET

文件：977.42 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

8 or 16 digital outputs/Fused outputs for short circuit protection cFP-DO-410

文件：400.96 Kbytes 页数：4 Pages

NI

恩艾

Solid state reliability

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AMPHENOL

安费诺

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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ONSEMI

安森美半导体