NDS0610中文资料仙童半导体数据手册PDF规格书

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180mA DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

特性 Features

■ -0.18 and -0.12A, -60V. RDS(ON) = 10W

■ Voltage controlled p-channel small signal switch

■ High density cell design for low RDS(ON)

■ TO-92 and SOT-23 packages for both through hole and surface mount applications

■ High saturation current