InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

瑞萨

LASER DIODE

InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION

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RENESAS

瑞萨

Semiconductor Devices, Silicon hybrid Switching Regulators High Reliability Types

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MICROSEMI

美高森美

DUAL DSP PLUS MICRO FOR AUDIO APPLICATIONS

DESCRIPTION The device is a high-performance Digital Signal Processing IC particularly suited to Audio applications. The device contains two 24-bit 42 MIPS DSP cores delivering a total of 84 MIPS of DSP processing power. There is also an embedded 8-bit Microcontroller to handle all control functi

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STMICROELECTRONICS

意法半导体

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics. Features ● Suitable for pulse operation ● Wide angle of half intensity ϕ = ± 30
● Peak wavel

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VISHAYVishay Siliconix

威世威世科技公司