N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

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FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW

DESCRIPTION The TS831 is an ultra low power integrated circuit incorporating a high stability band-gap voltage reference and a comparator with an open drain output. ■ ULTRA LOW POWER CONSUMPTION : 12µA maximum ■ PRECISION RESET THRESHOLD ■ THRESHOLD VOLTAGE: 4.33V typ. FOR TS831-5

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STMICROELECTRONICS

意法半导体

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

文件：79.45 Kbytes 页数：16 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

文件：79.45 Kbytes 页数：16 Pages

NEC

瑞萨