isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.57 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.0A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.53 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET 620 V, 0.98 ,

文件：147.89 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET 620 V, 0.98 ,

文件：147.89 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 620V 3.8A 1.2 Ohm Single N-Channel TO220FP

Power MOSFET 620V 1.2 Ohm Single N-Channel • Low ON Resistance\n• Low Gate Charge\n• 100% Avalanche Tested\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHSCompliant;

ONSEMI

安森美半导体