isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 0.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件：130.09 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 0.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 15Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.58 Kbytes 页数：2 Pages

ISC

无锡固电

功率 MOSFET，600V，0.8A，15Ω，单 N 沟道，DPAK

功率 MOSFET，600V，0.8A，15Ω，单 N 沟道，DPAK • 100% Avalanche Tested\n• Extremely High dv/dt Capability\n• Gate Charge Minimized\n• Zener−protected\n• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant;

ONSEMI

安森美半导体