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首页>NDD04N60Z-1G>详情
NDD04N60Z-1G_ON/安森美_MOSFET NFET IPAK 600V 4A 1.8R一线半导体3部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
NDD04N60Z-1G
- 功能描述:
MOSFET NFET IPAK 600V 4A 1.8R
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
- 企业:
深圳市一线半导体有限公司
- 商铺:
- 联系人:
云S/廖S
- 手机:
17727932378
- 询价:
- 电话:
0755-88608801/柜台:17727932378
- 传真:
0755-88608801
- 地址:
深圳市福田区福田街道福华社区福虹路4号华强花园C座7A
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