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NDB610BE中文资料仙童半导体数据手册PDF规格书

NDB610BE
厂商型号

NDB610BE

功能描述

N-Channel Enhancement Mode Field Effect Transistor

文件大小

73.91 Kbytes

页面数量

6

生产厂商 Fairchild Semiconductor
企业简称

FAIRCHILD仙童半导体

中文名称

飞兆/仙童半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-29 23:00:00

人工找货

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NDB610BE规格书详情

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 26 and 24A, 100V. RDS(ON) = 0.065 and 0.080Ω.

■ Critical DC electrical parameters specified at elevated temperature.

■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

■ 175°C maximum junction temperature rating.

■ High density cell design (3 million/in²) for extremely low RDS(ON).

■ TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

供应商 型号 品牌 批号 封装 库存 备注 价格
NS/国半
24+
NA/
4050
原装现货,当天可交货,原型号开票
询价
FSC
25+23+
TO263
76008
绝对原装正品现货,全新深圳原装进口现货
询价
NS
23+
TO-263
4500
全新原装、诚信经营、公司现货销售
询价
24+
3000
公司存货
询价
ON Semiconductor
2022+
TO-263-3,D2Pak(2 引线 + 接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NS
22+
TO-263
25000
只做原装进口现货,专注配单
询价
NS/国半
99+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NS
TO-263
22+
6000
十年配单,只做原装
询价
NK/南科功率
2025+
TO-263-2
986966
国产
询价
NS
2023+
TO-263
8800
正品渠道现货 终端可提供BOM表配单。
询价