Isolated Dual Channel IGBT Gate Driver

NCx575y0 are high−current two channel isolated IGBT gate drivers with 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias vo

文件：821.76 Kbytes 页数：23 Pages

ONSEMI

安森美半导体

Isolated Dual-Channel IGBT Gate Driver with >8mm Creepage and Clearance

NCD(V)57252/3/5/6 are high−current dual-channel isolated IGBT gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to • High Peak Output Current (±6.5 A, ±3.5 A)\n• Enables Removal of Buffer\n• Configurable as a Dual Low−Side or Dual High−Side or Half−Bridge Driver\n• Design Flexibility\n• Tight UVLO Thresholds on all Power Supplies\n• Consistent Performance\n• 2.5 or 5 kVrms Galvanic Isolation from Input to each O;

ONSEMI

安森美半导体

Isolated Dual Channel IGBT Gate Driver

NCx575y0 are high−current two channel isolated IGBT gate drivers with 5 kVrms internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up to 32 V bias vo

文件：821.76 Kbytes 页数：23 Pages

ONSEMI

安森美半导体

IR Receiver Modules for Remote Control Systems

文件：270.06 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

IR Receiver Modules for Remote Control Systems

DESCRIPTION This IR receiver series is optimized for short burst remote control systems in different environments. The customer can chose between different IC settings (AGC variants), to find the optimum solution for his application. The higher the AGC, the better noise is suppressed, but the

文件：387.99 Kbytes 页数：12 Pages

VishayVishay Siliconix

威世威世科技公司