NCV57081BDR2G规格书应用电路批发采购-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCV57081BDR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57081BDR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCV59749MNADJTBG	文件：0 bytes Page：0 Pages	QFN	ON/安森美上传：深圳市达恩科技有限公司	ON/安森美
NCV7321D12R2G	文件：0 bytes Page：0 Pages	SOP-8	ON/安森美上传：深圳市恒佳微电子有限公司	ON/安森美
NCV7321MW2R2G	文件：0 bytes Page：0 Pages	NA	ON 上传：深圳市品优时代科技有限公司	ON

更多NCV57081BDR2G供应商更新时间2026-2-10 9:38:00