NCV57001FDWR2G中文资料Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation数据手册ONSEMI规格书

描述 Description

NCV57001F is a variant of NCV57001 with reduced Soft-
Turn-Off time suited to drive large IGBTs or power modules.
NCV57001F is a high−current single channel IGBT driver with internal
galvanic isolation, designed for high system efficiency and reliability
in high power applications. Its features include complementary inputs,
open drain FAULT and Ready outputs, active Miller clamp, accurate
UVLOs, DESAT protection, and soft turn-off at DESAT. NCV57001F
accommodates both 5V and 3.3V signals on the input side and wide
bias voltage range on the driver side including negative voltage
capability. NCV57001F provides > 5 kVrms (UL1577 rating) galvanic
isolation and > 1200 Viorm (working voltage) capabilities. NCV57001F is
available in the wide-body SOIC-16 package with guaranteed 8 mm
creepage distance between input and output to fulfill reinforced safety
insulation requirements.

特性 Features

• High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages
• Improves system efficiency
• Short Propagation Delays with Accurate Matching
• Improves PWM signal integrity
• DESAT with Soft Turn Off
• Protection against overload and short circuits
• Active Miller Clamp and Negative Gate Voltage
• Prevents spurious gate turn-on
• High Transient & Electromagnetic Immunity
• Ruggedness in fast slew rate high voltage and high current switching applications
• 5 kV Galvanic Isolation
• Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection

应用 Application

• Automotive Power Supplies
• HEV/EV Traction Inverters
• OBC
• BSG Inverters
• PTC Heaters
• EV Vehicles