Current-Shunt Monitor, Voltage Output Bi-Directional Zero-Drift

文件：86.25 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

文件：23.14 Kbytes 页数：2 Pages

NTE

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

文件：55.13 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

1024- 횞 512-pixel ccd image sensor

文件：325.65 Kbytes 页数：21 Pages

TI

德州仪器