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NCS20092中文资料运算放大器,5.5V 轨对轨输入和输出,350 kHz,双路数据手册ONSEMI规格书

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厂商型号

NCS20092

功能描述

运算放大器,5.5V 轨对轨输入和输出,350 kHz,双路

制造商

ONSEMI ON Semiconductor

中文名称

安森美半导体

数据手册

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更新时间

2025-10-1 22:59:00

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NCS20092规格书详情

描述 Description

The NCS2009 series operational amplifiers provide rail−to−rail input and output operation, 350 kHz bandwidth, and are available in single, dual, and quad configurations. Rail−to−rail operation gives designers use of the entire supply voltage range while taking advantage of the 350 kHz bandwidth. The NCS2009 can operate on supply voltages from 1.8 to 5.5 V over a temperature range from −40 to 125°C. At a 1.8 V supply, this device has a slew rate of 0.15 V/\u0002s while consuming only 20 \u0002µA of quiescent current per channel. Since this is a CMOS device, high input impedance and low bias currents make it ideal for interfacing to a wide variety of signal sensors. The NCS2009 devices are available in a variety of compact packages.

特性 Features

• Rail−to−Rail Input and Output
• Wide Supply Range: 1.8 to 5.5 V
• Wide Bandwidth: 350 kHz
• High Slew Rate: 0.15 V/\u0002s at VS = 1.8 V
• Low Supply Current: 20 \u0002µA per Channel at VS = 1.8 V
• Low Input Bias Current: 1 pA Typical
• Wide Temperature Range: −40 to 125°C
• Available in a Variety of Packages
• NCV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC−Q100Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliant

应用 Application

• Unity Gain Buffer
• Battery Powered / Low Quiescent Current Applications
• Low Cost Current Sensing
• Automotive

技术参数

  • 制造商编号

    :NCS20092

  • 生产厂家

    :ONSEMI

  • Pb-free

    :Pb

  • AEC Qualified

    :A

  • Halide free

    :H

  • PPAP Capablee

    :P

  • Status

    :Active

  • Rail to Rail

    :Input/Output

  • Channels

    :2

  • VS Min (V)

    :1.8

  • VS Max (V)

    :5.5

  • Iq Typ (mA)

    :0.02

  • VOS Max (mV)

    :3.5

  • GBW Typ (MHz)

    :0.35

  • SR Typ (V/µs)

    :0.15

  • IO Typ (mA)

    :7.5

  • ΔVOS/ΔT (μV/C)

    :1

  • eN (nV/√Hz)

    :40

  • Ibias Typ (pA)

    :1

  • CMRR Typ (dB)

    :79

  • Architecture

    :CMOS

  • Temperature Range (°C)

    :-40 to 125

  • Package Type

    :Micro8™

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