NCP303160数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The NCP303160 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The driver and MOSFETs have been optimized for high−current and high efficiency DC−DC buck power conversion applications. The NCP303160 integrated solution greatly reduces package parasitics and board space compared to a discrete component solution.

特性 Features

• 30 V / 30 V Breakdown Voltage MOSFETs for Higher Long TermReliability
• Good breakdown margin for graphics and desktop applications design
• Capable of Average Currents up to 60 A
• Higher Efficiency or Less Phase Count Required
• Capable of Switching at Frequencies up to 1 MHz
• Smaller Inductor Feasible
• Compatible with 3.3 V or 5 V PWM Input
• Flexible to Work with Different PWM Controllers
• Responds Properly to 3−level PWM Inputs
• H/S and L/S FETs Working Properly
• Precise Current Monitoring
• Better current balancing for safer system design
• Option for Zero Cross Detection with 3−level PWM
• Flexible to Select ZCD Operation on Different Applications
• Internal Bootstrap Diode
• Easier layout
• Supports Intel® Power State 4
• Capable of Low Power Saving
• Catastrophic Fault Detection♦ Thermal Flag (OTP) for Over−Temperature Condition♦ Over−Current Protection FAULT (OCP)♦ Under−Voltage Lockout (UVLO) on VCC and PVCC
• For Safety
• 80 A Packaged−Level UIS Tested to Improve Robustness
• Robustness Improved

应用 Application

• Desktop & Notebook Microprocessors
• Routers and Switches
• Supports Intel® Power State 4
• Desktop & Notebook Microprocessors
• Graphic Cards
• Routers and Switches

简介

NCP303160属于集成电路（IC）的栅极驱动器。由制造生产的NCP303160栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。