NCP303150中文资料Integrated Driver and MOSFET with IntegratedCurrent Monitor数据手册ONSEMI规格书

描述 Description

The NCP303150 integrates a MOSFET driver, high−side MOSFET
and low−side MOSFET into a single package.

The driver and MOSFETs have been optimized for high−current
DC−DC buck power conversion applications. The NCP303150
integrated solution greatly reduces package parasitics and board space
compared to a discrete component solution.

特性 Features

• High−Performance, Universal Footprint, Copper−Clip 5 mm x 6 mmPQFN Package
• 30 V / 30 V Breakdown Voltage MOSFETs for Higher Long TermReliability
• Capable of Average Currents up to 50 A
• Capable of Switching at Frequencies up to 1 MHz
• Compatible with 3.3 V or 5 V PWM Input
• Responds Properly to 3−level PWM Inputs
• Precise Current Monitoring
• Option for Zero Cross Detection with 3−level PWM
• Internal Bootstrap Diode
• Supports Intel® Power State 4
• Catastrophic Fault Detection♦ Thermal Flag (OTP) for Over−Temperature Condition♦ Over−Current Protection FAULT (OCP)♦ Under−Voltage Lockout (UVLO) on VCC and PVCC

应用 Application

• Desktop & Notebook Microprocessors
• Graphic Cards
• Routers and Switches
• Supports Intel® Power State 4

简介

NCP303150属于集成电路（IC）的栅极驱动器。由制造生产的NCP303150栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。