30-250V N-Channel SGT-I MOSFET

NCEPower

新洁能

Silicon Dual Power Rectifier

Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range ● Guarding for Stress Pr

文件：20.63 Kbytes 页数：2 Pages

NTE

2 Watt RF Load With Chain Up to 18 GHz With TNC Male Input Passivated Stainless Steel

文件：427.59 Kbytes 页数：4 Pages

PASTERNACK

TNC MALE PRECISION TERMINATION WITH CHIN FREQUENCY RANGE: DC TO 18GHz

文件：86.21 Kbytes 页数：1 Pages

PASTERNACK