NCEAP026N10T中文资料新洁能数据手册PDF规格书

描述 Description

The NCEAP026N10T uses Super Trench II technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

RDS(ON) and Qg. This device is ideal for high-frequency switching

and synchronous rectification.

Application

●Automotive application

●DC/DC Converter

●Ideal for high-frequency switching and synchronous rectification

General Features

● VDS =100V,ID =245A (Silicon Limited)

RDS(ON)=2.15mΩ , typical@ VGS=10V

● Excellent gate charge x RDS(on) product(FOM)

● Very low on-resistance RDS(on)

● 175 °C operating temperature

● Pb-free lead plating

● 100 UIS tested

● 100 ΔVds tested

● AEC-Q101 qualified