N沟道 MOSFET

\n The NCE80H14 uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS =80V,I D =140A\nR DS(ON) < 6.5m? @ V GS =10V (Typ:5.9m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Good stability and uniformity with high E AS\n• Excellent package for good heat dissipation\n• Special process technology for high;

NCEPower

新洁能

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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SEME-LAB

SOP-8

NCE

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BGA153

FORESEE/江波龙

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TO-220

NCE(新洁能）

上传：上海闻业电子科技有限公司