N沟道 MOSFET

\n The NCE8010S uses advanced trench technology and design to provide excellent R DS(ON)  with low gate charge. It can be used in a wide variety of applications. \n• V DS = 80V,I D =10A\nR DS(ON) < 16m? @ V GS =10V (Typ:13m?)\nR DS(ON) < 20m? @ V GS =4.5V (Typ:14.8m?)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Low gate to drain charge to reduce switching losses;

NCEPower

新洁能

VXIbus Interface Kits for PCI

文件：632.03 Kbytes 页数：4 Pages

NI

恩艾

Radial Lead Thermal Cutoff

文件：58.38 Kbytes 页数：1 Pages

NTE

Low Capacitance 8 Line EMI Filter with ESD Protection in UDFN Package

8-Channel EMI Filter with Integrated ESD Protection The NUF8010MU is a eight−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100Ω and C = 7 pF deliver a cutoff frequency of 215 MHz and stop band attenuation greater than −20 dB from 800

文件：87.78 Kbytes 页数：4 Pages

ONSEMI

安森美半导体