NCE70N100I中文资料无锡新洁能股份数据手册PDF规格书

厂商型号	NCE70N100I
功能描述	NCE N-Channel Enhancement Mode Power MOSFET
丝印标识	NCE70N100I
封装外壳	TO-251-3L
文件大小	395.74 Kbytes
页面数量	7 页
生产厂商	Wuxi NCE Power Semiconductor Co., Ltd
企业简称	NCEPOWER【无锡新洁能股份】
中文名称	无锡新洁能股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 14:03:00
人工找货	NCE70N100I价格和库存，欢迎联系客服免费人工找货

描述 Description

The NCE70N100I uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS = 100V,ID =57A

RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply