P沟道 MOSFET

NCEPower

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4.3A RDS(ON)

文件：673.71 Kbytes 页数：8 Pages

NCEPOWER

新洁能

NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features ● VDS =-60V,ID =-4A RDS(ON)

文件：363.1 Kbytes 页数：7 Pages

NCEPOWER

新洁能

P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：1.11335 Mbytes 页数：10 Pages

VBSEMI

微碧半导体