NCE N-Channel Enhancement Mode Power MOSFET

文件：422.71 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 60 V (D-S) MOSFET

文件：994.86 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N沟道 MOSFET

NCEPower

新洁能

Silicon Dual Power Rectifier

Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: ● Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range ● Guarding for Stress Pr

文件：20.63 Kbytes 页数：2 Pages

NTE

60 Amp Schottky Rectifier

60 Amp Schottky Rectifier ● Schottky barrier rectifier ● Hermetic packaging ● Guard ring protected ● Reverse Energy Tested ● 175°C junction temperature ● VRRM - 90 to 100 Volts

文件：127.8 Kbytes 页数：2 Pages

MICROSEMI

美高森美

60 AMP SCHOTTKY RECTIFIER

60 Amp Schottky Rectifier ● Schottky barrier rectifier ● Hermetic packaging ● Guard ring protected ● Reverse Energy Tested ● 175°C junction temperature ● VRRM - 90 to 100 Volts

文件：142.35 Kbytes 页数：2 Pages

MICROSEMI

美高森美