N沟道 MOSFET

The NCE3060G uses advancedtrench technology and design to provide excellent RDS(ON) with lowgate charge. It can be used in a wide variety of applications. • VDS=30V,ID =60ARDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <5.5mΩ @ VGS=4.5V• High density cell design for ultra low Rdson• Fullycharacterized avalanche voltage and current• Good stability and uniformity with high EAS• Excellentpackage for good heat dissipation• Specialprocess technology for high ESD capabil;

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：361.16 Kbytes 页数：7 Pages

NCEPOWER

新洁能

3-phase 3-line 250VAC

文件：269.89 Kbytes 页数：4 Pages

SOSHIN

双信电机

3-phase 3-line 250VAC

文件：219.44 Kbytes 页数：3 Pages

SOSHIN

双信电机

3-phase 3-line 250VAC

文件：653.54 Kbytes 页数：5 Pages

SOSHIN

双信电机