丝印：NCE16P40Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE16P40Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. Application ● Power management ● Load switch General Features ● VDS = -40V,ID = -15A RDS(ON)

文件：747.5 Kbytes 页数：8 Pages

NCEPOWER

新洁能

12-150V P-Channel Trench MOSFET

NCEPower

新洁能

SUPER FAST RECOVERY RECTIFIER

文件：68.19 Kbytes 页数：2 Pages

CHENMKO

力勤

20.0 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：985.24 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

20.0 Ampere Heatsink Dual Common Anode Ultra Fast Recovery Rectifiers

Features ◆ Low forward voltage drop ◆ ThinkiSemi mesa technology with high efficiency ◆ High current capability ◆ High surge current capability ◆ Low reverse leakage current Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,Motor Control,SMPS and UPS ◆ Car Audi

文件：985.22 Kbytes 页数：3 Pages

THINKISEMI

思祁半导体

Low Forward Voltage drop Diode

Construction: Diffusion-type Silicon Diode Application : High Frequency Rectification

文件：45.68 Kbytes 页数：4 Pages

NIEC