NCE160ED120VTP4中文资料无锡新洁能股份数据手册PDF规格书

General Description

Using NCE's proprietary high density trench gate design and advanced FS

(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior

conduction and switching performances, and easy parallel operation.

特性 Features

 Trench FS Gen.7 Technology Offering

 Low saturation voltage: VCEsat = 1.6V(Typ.) @ IC = 160 A

 Maximum junction temperature Tvjmax = 175°C

 High speed switching，Low switching loss

 Tighten parameter distribution

 High ruggedness, temperature stable behavior

 Pb-free lead plating; RoHS compliant

Application

 PV power

 Three-level Solar String Inverter

 UPS