NCE N-Channel Enhancement Mode Power MOSFET

文件：375.19 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N沟道 MOSFET

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：374.3 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N沟道 MOSFET

\n The NCE15H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This\n device is suitable for use in PWM, load switching and general purpose applications. \n• VDS =150V,ID =100A\nRDS(ON) <11mΩ @ VGS=10V (Typ:9.5mΩ)\n• High density cell design for ultra low Rdson\n• Fully characterized avalanche voltage and current\n• Special designed for convertors and power controls\n• Good stability and uniformity with high EAS\n• Excellent package for good heat dis;

NCEPower

新洁能

N沟道 MOSFET

NCEPower

新洁能