N沟道 MOSFET

The NCE0202VA uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCEPower

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：318.41 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：320.68 Kbytes 页数：7 Pages

NCEPOWER

新洁能

NCE N-Channel Enhancement Mode Power MOSFET

文件：321.94 Kbytes 页数：7 Pages

NCEPOWER

新洁能

Power MOSFET -20 V, -400 mA, P-Channel SOT-23 Package

Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life RDSon = 0.80Ω, VGS = −10 V RDSon = 1.10Ω, VGS = −4.5 V • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Packages are Available Applicat

文件：54.71 Kbytes 页数：6 Pages

ONSEMI

安森美半导体