NCE0140AK2中文资料无锡新洁能股份数据手册PDF规格书

厂商型号	NCE0140AK2
功能描述	NCE N-Channel Enhancement Mode Power MOSFET
丝印标识	NCE0140AK2
封装外壳	TO-252-2L
文件大小	632.58 Kbytes
页面数量	7 页
生产厂商	Wuxi NCE Power Semiconductor Co., Ltd
企业简称	NCEPOWER【无锡新洁能股份】
中文名称	无锡新洁能股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-1 23:00:00
人工找货	NCE0140AK2价格和库存，欢迎联系客服免费人工找货

描述 Description

The NCE0140AK2 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications. General Features

● VDS = 100V,ID =40A

RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ)

RDS(ON) < 18mΩ @ VGS=4.5V (Typ:15mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply