NCD57081CDR2G数据手册批发采购ONSEMI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCD57081CDR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCV57081CDR2G	文件：1.18417 Mbytes Page：24 Pages	Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio 文件：1.18417 Mbytes 页数：24 Pages	ONSEMI 安森美半导体	ONSEMI
NCD57090ADWR2G	文件：0 bytes Page：0 Pages	ON SOP8	ON 上传：深圳市向鸿伟业电子有限公司	ON
NCE0102	文件：0 bytes Page：0 Pages	NCE新洁能 SOT23	NCE新洁能上传：深圳市乐创天科技有限公司	NCE新洁能
NCE01P30K内存芯片	文件：0 bytes Page：0 Pages	NCE/新洁能 TO-252	NCE/新洁能上传：深圳庞田科技有限公司	NCE/新洁能

更多NCD57081CDR2G供应商更新时间2025-10-8 18:04:00