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NCD57000DWR2G集成电路(IC)的栅极驱动器规格书PDF中文资料

NCD57000DWR2G
厂商型号

NCD57000DWR2G

参数属性

NCD57000DWR2G 封装/外壳为16-SOIC(0.295",7.50mm 宽);包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 16SOIC

功能描述

Isolated High Current IGBT Gate Driver
IC GATE DRVR HALF-BRIDGE 16SOIC

封装外壳

16-SOIC(0.295",7.50mm 宽)

文件大小

520.63 Kbytes

页面数量

22

生产厂商 ON Semiconductor
企业简称

ONSEMI安森美半导体

中文名称

安森美半导体公司官网

原厂标识
数据手册

原厂下载下载地址一下载地址二到原厂下载

更新时间

2025-5-7 17:04:00

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NCD57000DWR2G规格书详情

NCD57000DWR2G属于集成电路(IC)的栅极驱动器。由安森美半导体公司制造生产的NCD57000DWR2G栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能,这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备(通常为 FET 或 IGBT)。任何特定设备提供的确切功能各不相同,但与它适合驱动的半导体配置相关。

NCD57000 is a high−current single channel IGBT driver with

internal galvanic isolation, designed for high system efficiency and

reliability in high power applications. Its features include

complementary inputs, open drain FAULT and Ready outputs, active

Miller clamp, accurate UVLOs, DESAT protection, soft turn−off at

DESAT, and separate high and low (OUTH and OUTL) driver outputs

for system design convenience. NCD57000 accommodates both 5 V

and 3.3 V signals on the input side and wide bias voltage range on the

driver side including negative voltage capability. NCD57000 provides

> 5 kVrms (UL1577 rating) galvanic isolation and > 1200 VIORM

(working voltage) capabilities. NCD57000 is available in the

wide−body SOIC−16 package with guaranteed 8 mm creepage

distance between input and output to fulfill reinforced safety

insulation requirements.

Features

• High Current Output (+4/−6 A) at IGBT Miller Plateau Voltages

• Low Output Impedance for Enhanced IGBT Driving

• Short Propagation Delays with Accurate Matching

• Active Miller Clamp to Prevent Spurious Gate Turn−on

• DESAT Protection with Programmable Delay

• Negative Voltage (Down to −9 V) Capability for DESAT

• Soft Turn Off During IGBT Short Circuit

• IGBT Gate Clamping During Short Circuit

• IGBT Gate Active Pull Down

• Tight UVLO Thresholds for Bias Flexibility

• Wide Bias Voltage Range including Negative VEE2

• 3.3 V to 5 V Input Supply Voltage

• Designed for AEC−Q100 Certification

• 5000 V Galvanic Isolation (to meet UL1577 Requirements)

• 1200 V Working Voltage (per VDE0884−11 Requirements)

• High Transient Immunity

• High Electromagnetic Immunity

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

Typical Applications

• Solar Inverters

• Motor Control

• Uninterruptible Power Supplies (UPS)

• Industrial Power Supplies

• Welding

产品属性

更多
  • 产品编号:

    NCD57000DWR2G

  • 制造商:

    onsemi

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 系列:

    Automotive, AEC-Q100

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    单路

  • 栅极类型:

    IGBT

  • 电压 - 供电:

    24V

  • 电流 - 峰值输出(灌入,拉出):

    7.8A,7.1A

  • 输入类型:

    反相,非反相

  • 上升/下降时间(典型值):

    10ns,15ns

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    16-SOIC(0.295",7.50mm 宽)

  • 供应商器件封装:

    16-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 16SOIC

供应商 型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
ON(安森美)
23+
SOIC-16
10250
公司只做原装正品,假一赔十
询价
ON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
onsemi/安森美
22+
原装封装
1000
品质保证,信誉至上
询价
ON(安森美)
24+
SOIC-16
6000
全新原厂原装正品现货,低价出售,实单可谈
询价
ON
25+
16SOIC
19767
原厂原装,价格优势!13246658303
询价
ON(安森美)
23+
标准封装
5000
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
onsemi
23+
16-SOIC
4500
特惠实单价格秒出原装正品假一罚万
询价
ON(安森美)
6000
询价
ON(安森美)
23+
标准封装
8000
正规渠道,只有原装!
询价