NTE1100

IntegratedCircuitTVSoundIFAmp,FMIFAmp

Features: •HighPowerGain:GP=69dB(Typ) •GoodLimiterCharacteristic:VIN(lim)=600µV(Typ) •HighOutputVoltage:VOM=800V(Typ) •WideFrequencyRange:f=1kHzto20MHz •OperatingSupplyVoltageRange:VCC=6Vto15V

NTGD1100L

PowerMOSFET8V,짰.3A,LoadSwitchwithLevel?뭆hift,P?묬hannel,TSOP??

LowProfile,SmallFootprintPackaging ONSemiconductoroffersthelatestinlow-profile,small-outlinepackaging.Weenablethedesignandproductionofultra-thinend-userproductsfortheconsumermarket,bymanufacturingsomeofthelowestprofilepackagingavailableintheworld,invastvol

NTGD1100L

HighEfficiencyDC-DCConverters

NTGD1100L

PowerMOSFET

OL-1100

T-1Sub-MidgetFlanged

OZRA1100FF

RadialLeadedPTC

P1100DM

ThyristorSurgeSuppressors(TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

P1100E

TO-92SIDACtorsolidstateprotectiondevicesprotecttelecommunicationsequipmentsuch

TO-92SIDACtorsolidstateprotectiondevicesprotecttelecommunicationsequipmentsuchasmodems,linecards,andCPE(telephones,answeringmachines,andfaxmachines). SIDACtordevicesenableequipmenttocomplywithvariousregulatoryrequirementsincludingGR1089,ITUK.20,K.21andK.45,I

P1100E

ThyristorSurgeSuppressors(TSS)

P1100E_L

SIDACtor짰Device

TO-92SIDACtorsolidstateprotectiondevicesprotecttelecommunicationsequipmentsuchasmodems,linecards,andCPE(telephones,answeringmachines,andfaxmachines). SIDACtordevicesenableequipmenttocomplywithvariousregulatoryrequirementsincludingGR1089,ITUK.20,K.21andK.45,I