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NAND512W3A2CZA6

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512W3A2CZA6E

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi

文件:1.27065 Mbytes 页数:51 Pages

NUMONYX

NAND512W3A2CZA6E

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512W3A2CZA6F

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512W3A2CZA6F

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi

文件:1.27065 Mbytes 页数:51 Pages

NUMONYX

NAND512W3A2CZA6T

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512W3A2CZA6E

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件:674.58 Kbytes 页数:51 Pages

STMICROELECTRONICS

意法半导体

NAND512W3A2CZA6F

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件:674.58 Kbytes 页数:51 Pages

STMICROELECTRONICS

意法半导体

NAND512W3A2CZA6E

Package:63-TFBGA;包装:管件 类别:集成电路(IC) 存储器 描述:IC FLSH 512MBIT PARALLEL 63VFBGA

ELPIDA

尔必达

详细参数

  • 型号:

    NAND512W3A2CZA6

  • 功能描述:

    IC FLASH 512MBIT 63VFBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 产品变化通告:

    Product Discontinuation 26/Apr/2010

  • 标准包装:

    136

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步,DDR II

  • 存储容量:

    18M(1M x 18)

  • 速度:

    200MHz

  • 接口:

    并联

  • 电源电压:

    1.7 V ~ 1.9 V

  • 工作温度:

    0°C ~ 70°C

  • 封装/外壳:

    165-TBGA

  • 供应商设备封装:

    165-CABGA(13x15)

  • 包装:

    托盘

  • 其它名称:

    71P71804S200BQ

供应商型号品牌批号封装库存备注价格
STM
24+
BGA
23000
免费送样原盒原包现货一手渠道联系
询价
ST
16+
BGA
2500
进口原装现货/价格优势!
询价
ST
23+
N/A
8560
受权代理!全新原装现货特价热卖!
询价
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
ST
1923+
BGA
5896
原装进口现货库存专业工厂研究所配单供货
询价
ST/意法
23+
BGA
89630
当天发货全新原装现货
询价
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
ST/意法
24+
BGA
990000
明嘉莱只做原装正品现货
询价
ST
703
20
优势货源原装正品
询价
ST
25+
BGA
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多NAND512W3A2CZA6供应商 更新时间2025-10-4 17:06:00