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NAND512R3A2C

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi

文件:1.27065 Mbytes 页数:51 Pages

NUMONYX

NAND512R3A2C

512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories

文件:1.38089 Mbytes 页数:55 Pages

NUMONYX

NAND512R3A2C

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

文件:674.58 Kbytes 页数:51 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CN1

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CN1E

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CN1F

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CN1T

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CN6

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

NAND512R3A2CN6E

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

Description The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbi

文件:1.27065 Mbytes 页数:51 Pages

NUMONYX

NAND512R3A2CN6E

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp

文件:916.59 Kbytes 页数:57 Pages

STMICROELECTRONICS

意法半导体

详细参数

  • 型号:

    NAND512R3A2C

  • 功能描述:

    IC FLASH 512MBIT 63VFBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 产品变化通告:

    Product Discontinuation 26/Apr/2010

  • 标准包装:

    136

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步,DDR II

  • 存储容量:

    18M(1M x 18)

  • 速度:

    200MHz

  • 接口:

    并联

  • 电源电压:

    1.7 V ~ 1.9 V

  • 工作温度:

    0°C ~ 70°C

  • 封装/外壳:

    165-TBGA

  • 供应商设备封装:

    165-CABGA(13x15)

  • 包装:

    托盘

  • 其它名称:

    71P71804S200BQ

供应商型号品牌批号封装库存备注价格
STMICRO
24+
1257
询价
16+
BGA
2500
进口原装现货/价格优势!
询价
ST
17+
BGA
6200
100%原装正品现货
询价
ST
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
ST
6000
面议
19
DIP/SMD
询价
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
Numonyx/STMi
23+
63-VFBGA
65480
询价
Micron Technology Inc.
21+
144-TFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
STM
23+
BGA
30000
代理全新原装现货,价格优势
询价
Micron Technology Inc.
24+
63-VFBGA(9x11)
56200
一级代理/放心采购
询价
更多NAND512R3A2C供应商 更新时间2025-10-4 15:30:00