512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

文件：383.4 Kbytes 页数：59 Pages

STMICROELECTRONICS

意法半导体

256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP

Summary description The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine up to 512 Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory. Features ■ Multi-Chip Packages – 1

文件：228.19 Kbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

80 mA CMOS Low Iq Voltage Regulator in an SC70-5

文件：60.67 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

AC-DC Offline Switching Controllers/Regulators

文件：3.80862 Mbytes 页数：4 Pages

ONSEMI

安森美半导体